Description
Jun 13, 2013 TD350E . Advanced IGBT/MOSFET driver. Datasheet - production data. Features. 1.5 A source/2.3 A sink (typ.) gate drive. Active Miller clamp Feb 17, 2010 TD350 is an advanced gate driver for IGBT and power MOSFET. Control and protection functions are included and allow the design of high. Jul 8, 2004 TD350 is an advanced IGBT/MOSFET driver with integrated control and of operation and application examples for the TD350 are described The TD350 is an advanced Insulated Gate Bipolar Transistor (IGBT) driver with integrated The TD350 is especially adapted for driving 1200V IGBTs. STTH30L06WY 30A 600V Fast Rectifiers. U1, U2, U3, U4, U5,. U6. TD350 1.5A IGBT, MOSFET advanced gate driver 26V -10V. MCU. STM32F405 Cortex M4.
Part Number | TD350E |
Main Category | Integrated Circuits (ICs) |
Sub Category | PMIC - Gate Drivers |
Brand | STMicroelectronics |
Description | IC DRIVER IGBT/MOSFET 14-SOIC |
Series | - |
Packaging | Tube |
Driven Configuration | High-Side |
Channel Type | Single |
Number of Drivers | 1 |
Gate Type | IGBT, N-Channel MOSFET |
Voltage - Supply | 12 V ~ 26 V |
Logic Voltage - VIL, VIH | 0.8V, 4.2V |
Current - Peak Output (Source, Sink) | 1.5A, 2.3A |
Input Type | Non-Inverting |
High Side Voltage - Max (Bootstrap) | - |
Rise / Fall Time (Typ) | 130ns, 75ns (Max) |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 14-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 14-SO |
Image |
TD350E
STMicroel
20000
0.17
HK XINYI COMPONENTS ASIA CO., LIMITED
TD350E
STMICROELECT
2000
1.2075
HK HEQING ELECTRONICS LIMITED
TD350E
ST/MICRON
10600
2.245
Hong Kong Capital Industrial Co.,Ltd
TD350E
ST
872
3.2825
Bonase Electronics (HK) Co., Limited
TD350E
STMicroelectronics
21549
4.32
N&S Electronic Co., Limited