Part Number | STY139N65M5 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 650V 130A MAX247 |
Series | MDmesh,V |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 130A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 363nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 15600pF @ 100V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 625W (Tc) |
Rds On (Max) @ Id, Vgs | 17 mOhm @ 65A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | MAX247 |
Package / Case | TO-247-3 |
Image |
STY139N65M5
STMicroel
7234
0.8
AMAX ELECTRONIC TECHNOLOGY PTE.LTD.
STY139N65M5
STMICROELECT
2861
1.74
SEMICON INTERNATIONAL (HONG KONG) CO., LIMITED
STY139N65M5
ST/MICRON
2920
2.68
Belt (HK) Electronics Co
STY139N65M5
ST
4177
3.62
N&S Electronic Co., Limited
STY139N65M5 139N65M5
STMicroelectronics
432
4.56
CIS Ltd (CHECK IC SOLUTION LIMITED)