Part Number | STW56N65M2-4 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 650V I2PAKFP |
Series | MDmesh,M2 |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 49A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 93nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3900pF @ 100V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 358W (Tc) |
Rds On (Max) @ Id, Vgs | 62 mOhm @ 24.5A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247-4L |
Package / Case | TO-247-4 |
Image |
STW56N65M2-4
STMicroel
7728
0.56
VBsemi Electronics Co., Limited
STW56N65M2-4
STMICROELECT
1998
1.195
ONSTAR ELECTRONICS CO., LIMITED
STW56N65M2-4
ST/MICRON
3651
1.83
MY Group (Asia) Limited
STW56N65M2-4
ST
7554
2.465
HK TWO L ELECTRONIC LIMITED
STW56N65M2-4
STMicroelectronics
3294
3.1
CIS Ltd (CHECK IC SOLUTION LIMITED)