Description
Internal schematic diagram. Type. VDSS @. TJmax. RDS(on) max. ID. STB42N65M5. STF42N65M5. STI42N65M5. STP42N65M5. STW42N65M5 . 710 V. 710 V. May 14, 2010 STW42N65M5 or STW77N65M5 650 V power MOSFETs. Currently, most solutions adopt a half-bridge current generator topology instead of a
Part Number | STW42N65M5 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 650V 33A TO-247 |
Series | MDmesh,V |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 100nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 4650pF @ 100V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 190W (Tc) |
Rds On (Max) @ Id, Vgs | 79 mOhm @ 16.5A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247-3 |
Package / Case | TO-247-3 |
Image |
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