STMicroelectronics

Ref. [hkinstmicroelectronics20220920][hkinbrandcloudAMpd]

Electronic circuits form a mostly invisible part of the world we live in today. These circuits are present in microchips or just "chips", which combine the latest advances in performance, intelligence and, efficiency. Hundreds or thousands of these chips are integrated into each of the millions and billions of electronic devices people across the globe interact with every day. It is in this unseen realm that STMicroelectronics creates the sparks that animate the products we use at any given moment. Our technology is found everywhere microelectronics makes a positive contribution to people's lives. Chips from ST embedding the most advanced innovations are an essential part of products as diverse as cars and key fobs, giant factory machines and data center power supplies, washing machines and hard disks, and smartphones and toothbrushes. We help our customers make these devices more intelligent, more energy efficient, more connected, safer and more secure.

Rated (5/5) based on 16 customer reviews

Description

STW35N60DM2 . N-channel 600 V, 0.094 typ., 28 A MDmesh DM2. Power MOSFET in a TO-247 package. Datasheet - production data. Figure 1: Internal Aug 30, 2016 Mfr Site. Date. STW35N60DM2 . TSLW*FQ6KB62. A. SHENZHEN B/E. 2016-08- 30. Amount. UoM. Unit type. ST ECOPACK Grade. 4430.00 mg. Jul 7, 2016 power stage is based on MDmesh DM2 Power MOSFETs STW35N60DM2 Additionally, the DC-DC converter is provided with an active clamp STW35N60DM2 . 600V, 36A. MDmesh DM2 Power MOSFET. TO-247. ST. STW35N60DM2 . 102. Isolation sheet. Green sheet. High Flow 300P. Isolation mosfet Jul 14, 2016 STW35N60DM2 . Since the behavior of the converter is not symmetric for leading and lagging legs, different considerations to achieve ZVS are

Part Number STW35N60DM2
Main Category Discrete Semiconductor Products
Sub Category Transistors - FETs, MOSFETs - Single
Brand STMicroelectronics
Description MOSFET N-CH 600V 28A
Series MDmesh,DM2
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 54nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 100V
Vgs (Max) ±25V
FET Feature -
Power Dissipation (Max) 210W (Tc)
Rds On (Max) @ Id, Vgs 110 mOhm @ 14A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247
Package / Case TO-247-3
Image Discrete Semiconductor Products - Transistors
Lowest Price: $0.05   Highest Price: $4.4
1 - 5 of 5 Record(s)

Hot Offer

Part Number
Brand
D/C
Qty
Price (USD)
Company
Part Number:

STW35N60DM2

Brand:

STMicroelectronics

D/C:
21+
Qty:

10000

Price (USD):

4.4

Company:

WIDEY INTERNATIONAL LIMITED

Buy
Part Number
Brand
D/C
Qty
Price (USD)
Company
Part Number:

STW35N60DM2

Brand:

STMicroel

D/C:
21+
Qty:

20000

Price (USD):

0.05

Company:

HK XINYI COMPONENTS ASIA CO., LIMITED

Buy
Part Number:

STW35N60DM2

Brand:

STMICROELECT

D/C:
Qty:

75243

Price (USD):

1.1375

Company:

Kunlida Electronics (HK) Limited

Buy
Part Number:

STW35N60DM2

Brand:

ST/MICRON

D/C:
20+
Qty:

1200

Price (USD):

2.225

Company:

SUNSEMI TECHNOLOGY LIMITED

Buy
Part Number:

STW35N60DM2

Brand:

ST

D/C:
21+
Qty:

6000

Price (USD):

3.3125

Company:

Riking Technology (HK) Co., Limited

Buy

STW35N60DM2 Ref.

[hkinstmicroelectronics20220920][hkinbrandcloudAMpd]
[[[False]]]
Cached Page:404;https://stmicroelectronics.hkinventory.com:443/p/details