Part Number | STW33N60M2 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 600V 26A TO-247 |
Series | MDmesh,II Plus |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 45.5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1781pF @ 100V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 190W (Tc) |
Rds On (Max) @ Id, Vgs | 125 mOhm @ 13A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247 |
Package / Case | TO-247-3 |
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STW33N60M2
STMicroel
2390
0.24
SEMICON INTERNATIONAL (HONG KONG) CO., LIMITED
STW33N60M2
STMICROELECT
1200
1.78
Corich International Ltd.
STW33N60M2
ST/MICRON
21090
3.32
N&S Electronic Co., Limited
STW33N60M2
ST
70580
4.86
CIS Ltd (CHECK IC SOLUTION LIMITED)
STW33N60M2 33N60M2
STMicroelectronics
13806
6.4
N&S Electronic Co., Limited