Part Number | STW28N65M2 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 650V 20A TO247 |
Series | MDmesh,M2 |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1440pF @ 100V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 170W (Tc) |
Rds On (Max) @ Id, Vgs | 180 mOhm @ 10A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247 |
Package / Case | TO-247-3 |
Image |
STW28N65M2
STMicroel
7772
1.33
Ysx Tech Co., Limited
STW28N65M2
STMICROELECT
5423
2.365
Gallop Great Holdings (Hong Kong) Limited
STW28N65M2
ST/MICRON
2505
3.4
Cinty Int'l (HK) Industry Co., Limited
STW28N65M2
ST
3412
4.435
Honestwin Technology Co., Limited
STW28N65M2**
STMicroelectronics
8761
5.47
CIS Ltd (CHECK IC SOLUTION LIMITED)