Description
Oct 12, 2012 1/22. 22. STB21N90K5, STF21N90K5, STP21N90K5,. STW21N90K5 . N-channel 900 V, 0.25 typ., 18.5 A Zener-protected SuperMESH 5. Oct 16, 2015 Mfr Site. Date. STW21N90K5 . R1LW*VJ9LB52. A. SHENZHEN B/E. 2015-10-16. Amount. UoM. Unit type. ST ECOPACK Grade. 4430.00 mg. Feb 27, 2017 L= 470.0 H. DCR= 1.7 Ohm. 1. $0.42. CLF7045 86 mm2. 11. M1. STMicroelectronics. STW21N90K5 . VdsMax= 900.0 V. IdsMax= 18.5 Amps. 1. Jul 21, 2016 19. M1. STMicroelectronics. STW21N90K5 . VdsMax= 900.0 V. IdsMax= 18.5 Amps. 1. $3.94. TO-247 123 mm2. 20. M2. Infineon Technologies.
Part Number | STW21N90K5 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 900V 18.5A TO-247 |
Series | SuperMESH5 |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 900V |
Current - Continuous Drain (Id) @ 25°C | 18.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 43nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1645pF @ 100V |
Vgs (Max) | ±30V |
FET Feature | Current Sensing |
Power Dissipation (Max) | 250W (Tc) |
Rds On (Max) @ Id, Vgs | 299 mOhm @ 9A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247-3 |
Package / Case | TO-247-3 |
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