STMicroelectronics

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Electronic circuits form a mostly invisible part of the world we live in today. These circuits are present in microchips or just "chips", which combine the latest advances in performance, intelligence and, efficiency. Hundreds or thousands of these chips are integrated into each of the millions and billions of electronic devices people across the globe interact with every day. It is in this unseen realm that STMicroelectronics creates the sparks that animate the products we use at any given moment. Our technology is found everywhere microelectronics makes a positive contribution to people's lives. Chips from ST embedding the most advanced innovations are an essential part of products as diverse as cars and key fobs, giant factory machines and data center power supplies, washing machines and hard disks, and smartphones and toothbrushes. We help our customers make these devices more intelligent, more energy efficient, more connected, safer and more secure.

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Description

Oct 12, 2012 1/22. 22. STB21N90K5, STF21N90K5, STP21N90K5,. STW21N90K5 . N-channel 900 V, 0.25 typ., 18.5 A Zener-protected SuperMESH 5. Oct 16, 2015 Mfr Site. Date. STW21N90K5 . R1LW*VJ9LB52. A. SHENZHEN B/E. 2015-10-16. Amount. UoM. Unit type. ST ECOPACK Grade. 4430.00 mg. Feb 27, 2017 L= 470.0 H. DCR= 1.7 Ohm. 1. $0.42. CLF7045 86 mm2. 11. M1. STMicroelectronics. STW21N90K5 . VdsMax= 900.0 V. IdsMax= 18.5 Amps. 1. Jul 21, 2016 19. M1. STMicroelectronics. STW21N90K5 . VdsMax= 900.0 V. IdsMax= 18.5 Amps. 1. $3.94. TO-247 123 mm2. 20. M2. Infineon Technologies.

Part Number STW21N90K5
Main Category Discrete Semiconductor Products
Sub Category Transistors - FETs, MOSFETs - Single
Brand STMicroelectronics
Description MOSFET N-CH 900V 18.5A TO-247
Series SuperMESH5
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900V
Current - Continuous Drain (Id) @ 25°C 18.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1645pF @ 100V
Vgs (Max) ±30V
FET Feature Current Sensing
Power Dissipation (Max) 250W (Tc)
Rds On (Max) @ Id, Vgs 299 mOhm @ 9A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
Image Discrete Semiconductor Products - Transistors
Lowest Price: $0.32   Highest Price: $3.32
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HK Hongtaiyu Electron Limited

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