Part Number | STW20NM65N |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 650V 19A TO-247 |
Series | MDmesh,II |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 70nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2500pF @ 50V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 160W (Tc) |
Rds On (Max) @ Id, Vgs | 190 mOhm @ 9.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247-3 |
Package / Case | TO-247-3 |
Image |
STW20NM65N
STMicroel
1000
0.2
MY Group (Asia) Limited
STW20NM65N
STMICROELECT
5100
1.18
Dedicate Electronics (HK) Limited
STW20NM65N
ST/MICRON
25860
2.16
YU TUO (HONGKONG) TRADING CO., LIMITED
STW20NM65N
ST
3260
3.14
ONSTAR ELECTRONICS CO., LIMITED
STW20N95K5
STMicroelectronics
6000
4.12
Rolics Technology Limited