Part Number | STM STW11NM80 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 800V 11A TO-247 |
Series | MDmesh |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 43.6nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1630pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 150W (Tc) |
Rds On (Max) @ Id, Vgs | 400 mOhm @ 5.5A, 10V |
Operating Temperature | -65°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247-3 |
Package / Case | TO-247-3 |
Image |
STW11NM80
STMicroel
180
0.92
SUNTOP SEMICONDUCTOR CO., LIMITED
STW11NM80
STMICROELECT
9000
2.0925
AMAX ELECTRONIC TECHNOLOGY PTE.LTD.
STW11NM80
ST/MICRON
20000
3.265
HK XINYI COMPONENTS ASIA CO., LIMITED
STW11NM80
ST
1250
4.4375
FLOWER GROUP(HK)CO.,LTD
STW11NM80
STMicroelectronics
5094
5.61
Belt (HK) Electronics Co