Part Number | STU9HN65M2 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 650V 5.5A IPAK |
Series | MDmesh,M2 |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 11.5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 325pF @ 100V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 60W (Tc) |
Rds On (Max) @ Id, Vgs | 820 mOhm @ 2.5A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I-Pak |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Image |
STU9HN65M2
STMicroel
3000
0.24
E-Core Electronics Co.
STU9HN65M2
STMICROELECT
8765
1.2175
ONSTAR ELECTRONICS CO., LIMITED
STU9HN65M2
ST/MICRON
9880
2.195
MAIXIN SEMICONDUCTOR (HONGKONG) CO., LIMITED
STU9HN65M2
ST
14000
3.1725
N&S Electronic Co., Limited
STU9HN65M2
STMicroelectronics
13429
4.15
Senyes Electronic (HK) Limited