Part Number | STU13N65M2 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 650V 10A IPAK |
Series | MDmesh,M2 |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 590pF @ 100V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 110W (Tc) |
Rds On (Max) @ Id, Vgs | 430 mOhm @ 5A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | IPAK (TO-251) |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Image |
STU13N65M2
STMicroel
1000
0.28
MY Group (Asia) Limited
STU13N65M2
STMICROELECT
5000
1.2025
HITO TECHNOLOGY LIMITED
STU13N65M2
ST/MICRON
25860
2.125
YU TUO (HONGKONG) TRADING CO., LIMITED
STU13N65M2
ST
5000
3.0475
Muz Technology Co.,Ltd
STU13N65M2
STMicroelectronics
3260
3.97
ONSTAR ELECTRONICS CO., LIMITED