Description
Apr 17, 2013 STP13N60M2, STU13N60M2 ,. STW13N60M2. N-channel 600 V, 0.35 typ., 11 A MDmesh II Plus low Qg. Power MOSFETs in TO-220, IPAK Mar 15, 2016 STU13N60M2 . TXIK*MQ6FB62. A. SHENZHEN B/E. 2016-03-15. Amount. UoM. Unit type. ST ECOPACK Grade. 310.00 mg. Each. ECOPACK2. Sep 7, 2016 Taiwan Semiconductor has released a second generation of 600V super junction power MOSFETs offering faster, higher efficiency switching
Part Number | STU13N60M2 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 600V 11A IPAK |
Series | MDmesh,II Plus |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 580pF @ 100V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 110W (Tc) |
Rds On (Max) @ Id, Vgs | 380 mOhm @ 5.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | IPAK (TO-251) |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Image |
STU13N60M2
STMicroel
20000
1.33
HK XINYI COMPONENTS ASIA CO., LIMITED
STU13N60M2
STMICROELECT
6000
2.0775
HEDEYI ELECTRONIC (HK) CO.,LIMITED
STU13N60M2
ST/MICRON
5000
2.825
HITO TECHNOLOGY LIMITED
STU13N60M2
ST
20000
3.5725
FCC GROUP LIMITED
STU13N60M2
STMicroelectronics
21100
4.32
N&S Electronic Co., Limited