Part Number | STU10N60M2 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 600V IPAK |
Series | MDmesh,II Plus |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 7.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 13.5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 100V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 85W (Tc) |
Rds On (Max) @ Id, Vgs | 600 mOhm @ 3A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I-Pak |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Image |
STU10N60M2
STMicroel
4751
0.03
HITO TECHNOLOGY LIMITED
STU10N60M2
STMICROELECT
253
1.055
KDH SEMICONDUCTOR CO., LIMITED
STU10N60M2
ST/MICRON
1306
2.08
HK HEQING ELECTRONICS LIMITED
STU10N60M2
ST
7626
3.105
CIS Ltd (CHECK IC SOLUTION LIMITED)
STU10N60M2
STMicroelectronics
4164
4.13
Yingxinyuan INT'L (Group) Limited