Description
Aug 3, 2009 STS5N15F4 . N-channel 150 V, 0.057 , 5 A, SO-8. STripFET DeepGATE Power MOSFET. Features. N-channel enhancement mode. 5.6 uH. ME3220-562ML. Coilcraft. 54. L4. Inductor. 0.33uH. LPS4012-331L. Coilcraft. 55. Q1. Mosfet. STS4NF100. (suggested replacement: STS5N15F4 ). SO8. ME3220-562ML. Coilcraft. 52. Q1. Mosfet. STS4NF100. (suggested replacement: STS5N15F4 ). SO8. STMicroelectronics. 53. Q2. Mosfet. FDN86246. SOT23. 5.6 uH. ME3220-562ML. Coilcraft. 57. L4. Inductor. 0.33uH. LPS4012-331L. Coilcraft. 58. Q1. Mosfet. STS4NF100. (suggested replacement: STS5N15F4 ). SO8.
Part Number | STS5N15F4 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 150V 5A 8SO |
Series | DeepGATE, STripFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 150V |
Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 48nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2710pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Tc) |
Rds On (Max) @ Id, Vgs | 63 mOhm @ 2.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
Hot Offer
STS5N15F4
STMicroelectronics
8000
5.59
XZT Electronics (Xinzhongtai Electronics (Hong Kong) Co., Limited)
STS5N15F4
STMicroel
2215
1.04
HK HEQING ELECTRONICS LIMITED
STS5N15F4
STMICROELECT
20000
2.1775
HK XINYI COMPONENTS ASIA CO., LIMITED
STS5N15F4
ST/MICRON
1000
3.315
E-star Trading Enterprise Limited
STS5N15F4
ST
2500
4.4525
Antony Electronic Ltd.