Description
STS10N3LH5 . N-channel 30 V, 0.019 , 10 A, SO-8. STripFET V Power MOSFET. RDS(on) * Qg industry benchmark. Extremely low on-resistance STS10N3LH5 . C1O7*5H3AB5F. 2012-06-01 mg. Each. Alternate Recommendation PACKAGE: SO 08 .15 JEDEC. Alternate Item Comments ECOPACK2/ROHS; Q12 STS10N3LH5 SO. 8. C29. 1uF 1206 100V. C29. 1uF 1206 100V. D36 BAT46J SOD. 323. D36 BAT46J SOD. 323. C30 NM 0805. R94 21k 1%. C56. 22nF.
Part Number | STS10N3LH5 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 30V 10A 8-SOIC |
Series | STripFET,V |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 4.6nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 475pF @ 25V |
Vgs (Max) | ±22V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Tc) |
Rds On (Max) @ Id, Vgs | 21 mOhm @ 5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
STS10N3LH5
STMicroel
1195
1.35
Gallop Great Holdings (Hong Kong) Limited
STS10N3LH5
STMICROELECT
20000
2.1225
HK XINYI COMPONENTS ASIA CO., LIMITED
STS10N3LH5
ST/MICRON
1000
2.895
E-star Trading Enterprise Limited
STS10N3LH5
ST
2500
3.6675
Antony Electronic Ltd.
STS10N3LH5
STMicroelectronics
100
4.44
Yingxinyuan INT'L (Group) Limited