Description
STP7NB60 . C9. 330 F. 25 V. GND. IC1. L5991. C12. 4.7 nF. 1kV. D2. STTA106. R7 4.7 . R5 47 k . C2. 47 F. 25 V. R10. 22 . 5. 9. DCC. R8 5.6 k . VREF. May 25, 2001 STP7NB60 Toshiba. 2SK2544. * ON Semiconductor intends to support these products short term only. AFFECTED DEVICE LIST (WITHOUT Aug 3, 2001 2SK3068. Toshiba. NTD5N50T4. FQI5N50. Fairchild. NTB6N60. STB7NB60. STM. NTB6N60T4. STB7NB60. STM. NTP6N60. STP7NB60 . STM. STP7NB60 . C9. 330 F. 25 V. GND. IC1. L5991. C12. 4.7 nF. 2kV. D2. STTA106. R5 47 k . C2. 47 F. 25 V. R10. 22 . 5. 9. DCC. R8 22 k . VREF. C4.
Part Number | STP7NB60 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 600V 7.2A TO-220 |
Series | PowerMESH |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 7.2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 45nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1625pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 125W (Tc) |
Rds On (Max) @ Id, Vgs | 1.2 Ohm @ 3.6A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Image |
STP7NB60
STMicroel
65074
1.03
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
STP7NB60
STMICROELECT
66025
2.1875
ATLANTIC TECHNOLOGY LIMITED
STP7NB60
ST/MICRON
1020
3.345
CIS Ltd (CHECK IC SOLUTION LIMITED)
STP7NB60
ST
3260
4.5025
ONSTAR ELECTRONICS CO., LIMITED
STP7NB60
STMicroelectronics
595
5.66
Yingxinyuan INT'L (Group) Limited