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Part Number | STP6N65M2 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 650V 4A TO-220AB |
Series | MDmesh |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 9.8nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 226pF @ 100V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 60W (Tc) |
Rds On (Max) @ Id, Vgs | 1.35 Ohm @ 2A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220 |
Package / Case | TO-220-3 |
Image | ![]() |
STP6N65M2
STMicroel
100000
0.11
VBsemi Electronics Co., Limited
STP6N65M2
STMICROELECT
2766
1.2025
HK HEQING ELECTRONICS LIMITED
STP6N65M2
ST/MICRON
20
2.295
Gallop Great Holdings (Hong Kong) Limited
STP6N65M2
ST
200000
3.3875
Shenzhen WTX Capacitor Co., Ltd.
STP6N65M2
STMicroelectronics
1564
4.48
NEW IDEAS INDUSTRIAL CO., LIMITED