Part Number | STP33N60DM2 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 600V 24A |
Series | MDmesh,DM2 |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 43nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1870pF @ 100V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 190W (Tc) |
Rds On (Max) @ Id, Vgs | 130 mOhm @ 12A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220 |
Package / Case | TO-220-3 |
Image |
STP33N60DM2
STMicroel
4000
0.91
AMAX ELECTRONIC TECHNOLOGY PTE.LTD.
STP33N60DM2
STMICROELECT
1000
1.56
Corich International Ltd.
STP33N60DM2
ST/MICRON
20000
2.21
HK XINYI COMPONENTS ASIA CO., LIMITED
STP33N60DM2
ST
30058
2.86
N&S Electronic Co., Limited
STP33N60DM2
STMicroelectronics
8000
3.51
HK GRONICE ELECTRONIC TECHNOLOGY LIMITED