Part Number | STP28N60M2 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 600V 24A TO-220 |
Series | MDmesh,II Plus |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 37nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1370pF @ 100V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 170W (Tc) |
Rds On (Max) @ Id, Vgs | 150 mOhm @ 12A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220 |
Package / Case | TO-220-3 |
Image |
STP28N60M2
STMicroel
900
0.39
HK HEQING ELECTRONICS LIMITED
STP28N60M2
STMICROELECT
19554
1.1975
Corechips Co., Limited
STP28N60M2
ST/MICRON
20000
2.005
HK XINYI COMPONENTS ASIA CO., LIMITED
STP28N60M2
ST
2000
2.8125
Gallop Great Holdings (Hong Kong) Limited
STP28N60M2
STMicroelectronics
12000
3.62
SIC ELECTRONICS LIMITED