Part Number | STP24NM65N |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 650V 19A TO-220 |
Series | MDmesh,II |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 70nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2500pF @ 50V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 160W (Tc) |
Rds On (Max) @ Id, Vgs | 190 mOhm @ 9.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Image |
STP24NM65N
STMicroel
100
1.56
Gallop Great Holdings (Hong Kong) Limited
STP24NM65N
STMICROELECT
19172
2.375
ShenZhen hengjiaWei Electronic Co,.Ltd.
STP24NM65N
ST/MICRON
14000
3.19
MY Group (Asia) Limited
STP24NM65N
ST
2235
4.005
ATLANTIC TECHNOLOGY LIMITED
STP24NM65N
STMicroelectronics
6051
4.82
E-CORE COMPONENT CO., LIMITED