Part Number | STP16N65M2 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 650V 11A TO-220AB |
Series | MDmesh,M2 |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 19.5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 718pF @ 100V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 110W (Tc) |
Rds On (Max) @ Id, Vgs | 360 mOhm @ 5.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220 |
Package / Case | TO-220-3 |
Image |
STP16N65M2
STMicroel
6880
0.68
Hongxin Technology Limited
STP16N65M2
STMICROELECT
20000
1.4625
HK XINYI COMPONENTS ASIA CO., LIMITED
STP16N65M2
ST/MICRON
6000
2.245
HEDEYI ELECTRONIC (HK) CO.,LIMITED
STP16N65M2
ST
166
3.0275
E-Core Electronics Co.
STP16N65M2
STMicroelectronics
475
3.81
FCC GROUP LIMITED