Part Number | STP11NM65N |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 650V 11A TO-220 |
Series | MDmesh,II |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 800pF @ 50V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 110W (Tc) |
Rds On (Max) @ Id, Vgs | 455 mOhm @ 5.5A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220 |
Package / Case | TO-220-3 |
Image |
STP11NM65N
STMicroel
9000
0.71
Fairstock HK Limited
STP11NM65N
STMICROELECT
100
1.76
Gallop Great Holdings (Hong Kong) Limited
STP11NM65N
ST/MICRON
13429
2.81
Senyes Electronic (HK) Limited
STP11NM65N
ST
6000
3.86
SUMMER TECH(HK) LIMITED
STP11NM65N
STMicroelectronics
232611
4.91
Cicotex Electronics (HK) Limited