Part Number | STP11N65M5 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N CH 650V 9A TO-220 |
Series | MDmesh,V |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 644pF @ 100V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 85W (Tc) |
Rds On (Max) @ Id, Vgs | 480 mOhm @ 4.5A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220 |
Package / Case | TO-220-3 |
Image |
STP11N65M5
STMicroel
100
0.31
Gallop Great Holdings (Hong Kong) Limited
STP11N65M5
STMICROELECT
20000
1.36
HK XINYI COMPONENTS ASIA CO., LIMITED
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ST/MICRON
3403
2.41
NEW IDEAS INDUSTRIAL CO., LIMITED
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ST
10000
3.46
Corich International Ltd.
STP11N65M5
STMicroelectronics
6500
4.51
Top Electronics Co.,