Part Number | STP11N60DM2 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | N-CHANNEL 600 V, 0.26 OHM TYP., |
Series | MDmesh |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 16.5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 614pF @ 100V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 110W (Tc) |
Rds On (Max) @ Id, Vgs | 420 mOhm @ 5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220 |
Package / Case | TO-220-3 |
Image |
STP11N60DM2
STMicroel
4712
1.86
Ysx Tech Co., Limited
STP11N60DM2
STMICROELECT
7023
3.005
Honestwin Technology Co., Limited
STP11N60DM2 11N60DM2
ST/MICRON
642
4.15
Hong Kong YST Electronics Co., Limited
STP11N60DM2
ST
182
5.295
N&S Electronic Co., Limited
STP11N60DM2
STMicroelectronics
5302
6.44
N&S Electronic Co., Limited