Part Number | STP10N60M2 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 600V TO-220 |
Series | MDmesh,II Plus |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 7.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 13.5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 100V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 85W (Tc) |
Rds On (Max) @ Id, Vgs | 600 mOhm @ 3A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220 |
Package / Case | TO-220-3 |
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STP10N60M2
STMicroel
90
0.78
Gallop Great Holdings (Hong Kong) Limited
STP10N60M2
STMICROELECT
20000
2.07
HK XINYI COMPONENTS ASIA CO., LIMITED
STP10N60M2 10N60M2
ST/MICRON
250
3.36
Hong Kong YST Electronics Co., Limited
STP10N60M2
ST
200000
4.65
Shenzhen WTX Capacitor Co., Ltd.
STP10N60M2
STMicroelectronics
22196
5.94
N&S Electronic Co., Limited