STMicroelectronics

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Electronic circuits form a mostly invisible part of the world we live in today. These circuits are present in microchips or just "chips", which combine the latest advances in performance, intelligence and, efficiency. Hundreds or thousands of these chips are integrated into each of the millions and billions of electronic devices people across the globe interact with every day. It is in this unseen realm that STMicroelectronics creates the sparks that animate the products we use at any given moment. Our technology is found everywhere microelectronics makes a positive contribution to people's lives. Chips from ST embedding the most advanced innovations are an essential part of products as diverse as cars and key fobs, giant factory machines and data center power supplies, washing machines and hard disks, and smartphones and toothbrushes. We help our customers make these devices more intelligent, more energy efficient, more connected, safer and more secure.

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Description

STN3PF06 . P-channel 60 V - 0.20 - 2.5 A - SOT-223. STripFET II Power MOSFET. Features. Extremely dv/dt capability. 100% avalanche tested. Jan 29, 2015 Q1. NMOS 60V 12A. DPAK. STD12NF06L. ST. 1. Q2. NMOS 60V 2.5A. SOT23. IRLML0060TRPBF. IR. 1. Q3. PMOS 60V 2.5A. SO8. STN3PF06 . Page 1. AN-2029 Handling and Process. Recommendations. Application Report. Literature Number: SNOA550E. June 2010 Revised May 2016. Page 2. 2. Q14, Q16,. Q18. PBSS4041NT. SOT-23. SMD NPN general purpose amplifier. 51 . Q19. STN3PF06 . SOT223. P-channel power. Mosfet. STMicroelectronics. 52. May 22, 2015 Purpose Amplifier. SOT-23. COD. Farnell 1829356. 51. 1. Q19. STN3PF06 . P- channel Power Mosfet. SOT223. STMicroelectronics. STN3PF06 .

Part Number STN3PF06
Main Category Discrete Semiconductor Products
Sub Category Transistors - FETs, MOSFETs - Single
Brand STMicroelectronics
Description MOSFET P-CH 60V 2.5A SOT223
Series STripFET,II
Packaging
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 850pF @ 25V
Vgs (Max) -
FET Feature -
Power Dissipation (Max) 2.5W (Tc)
Rds On (Max) @ Id, Vgs 220 mOhm @ 1.5A, 10V
Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-223
Package / Case TO-261-4, TO-261AA
Image Discrete Semiconductor Products - Transistors
Lowest Price: $1.77   Highest Price: $6.68
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