Description
STN3PF06 . P-channel 60 V - 0.20 - 2.5 A - SOT-223. STripFET II Power MOSFET. Features. Extremely dv/dt capability. 100% avalanche tested. Jan 29, 2015 Q1. NMOS 60V 12A. DPAK. STD12NF06L. ST. 1. Q2. NMOS 60V 2.5A. SOT23. IRLML0060TRPBF. IR. 1. Q3. PMOS 60V 2.5A. SO8. STN3PF06 . Page 1. AN-2029 Handling and Process. Recommendations. Application Report. Literature Number: SNOA550E. June 2010 Revised May 2016. Page 2. 2. Q14, Q16,. Q18. PBSS4041NT. SOT-23. SMD NPN general purpose amplifier. 51 . Q19. STN3PF06 . SOT223. P-channel power. Mosfet. STMicroelectronics. 52. May 22, 2015 Purpose Amplifier. SOT-23. COD. Farnell 1829356. 51. 1. Q19. STN3PF06 . P- channel Power Mosfet. SOT223. STMicroelectronics. STN3PF06 .
Part Number | STN3PF06 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET P-CH 60V 2.5A SOT223 |
Series | STripFET,II |
Packaging | |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 21nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 850pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Tc) |
Rds On (Max) @ Id, Vgs | 220 mOhm @ 1.5A, 10V |
Operating Temperature | -65°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-223 |
Package / Case | TO-261-4, TO-261AA |
Image |
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