Part Number | STL18N60M2 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 600V 9A POWERFLAT |
Series | MDmesh,II Plus |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 21.5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 791pF @ 100V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 57W (Tc) |
Rds On (Max) @ Id, Vgs | 308 mOhm @ 4.5A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerFlat,(5x6) |
Package / Case | 4-PowerFlat,HV |
Image |
STL18N60M2
STMicroel
8969
1.04
HK HEQING ELECTRONICS LIMITED
STL18N60M2
STMICROELECT
5000000
2.0075
Hongkong Shengshi Electronics Limited
STL18N60M2
ST/MICRON
20000
2.975
HK XINYI COMPONENTS ASIA CO., LIMITED
STL18N60M2
ST
2803
3.9425
E-Core Electronics Co.
STL18N60M2
STMicroelectronics
5998
4.91
Y.H.X ELECTRONIC TECHNOLOGY HK LIMITED