Part Number | STL12N65M2 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 650V 8.5A PWRFLAT56 |
Series | MDmesh |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 12.5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 410pF @ 100V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 48W (Tc) |
Rds On (Max) @ Id, Vgs | 750 mOhm @ 3A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerFlat,(5x6) |
Package / Case | 8-PowerVDFN |
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STL12N65M2
STMicroel
5425
0.35
HK HEQING ELECTRONICS LIMITED
STL12N65M2
STMICROELECT
2905
1.76
Gallop Great Holdings (Hong Kong) Limited
STL12N65M2
ST/MICRON
100000
3.17
VBsemi Electronics Co., Limited
STL12N65M2
ST
20000
4.58
HK XINYI COMPONENTS ASIA CO., LIMITED
STL12N65M2
STMicroelectronics
9649
5.99
NEW IDEAS INDUSTRIAL CO., LIMITED