Part Number | STI25NM60ND |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 600V 21A I2PAK |
Series | FDmesh,II |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 80nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2400pF @ 50V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 160W (Tc) |
Rds On (Max) @ Id, Vgs | 160 mOhm @ 10.5A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAK |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
STI25NM60ND
STMicroel
1000
1.8
MY Group (Asia) Limited
STI25NM60ND
STMICROELECT
25860
2.5725
YU TUO (HONGKONG) TRADING CO., LIMITED
STI25NM60ND
ST/MICRON
7335
3.345
Dedicate Electronics (HK) Limited
STI25NM60ND
ST
3260
4.1175
ONSTAR ELECTRONICS CO., LIMITED
STI25NM60ND
STMicroelectronics
25000
4.89
Hong Kong Capital Industrial Co.,Ltd