Part Number | STI24NM65N |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 650V 19A I2PAK |
Series | MDmesh,II |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 70nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2500pF @ 50V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 160W (Tc) |
Rds On (Max) @ Id, Vgs | 190 mOhm @ 9.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAK |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
STI24NM65N
STMicroel
1000
0.55
MY Group (Asia) Limited
STI24NM65N
STMICROELECT
25000
1.575
Hong Kong Capital Industrial Co.,Ltd
STI24NM65N
ST/MICRON
13138
2.6
E-Core Electronics Co.
STI24NM65N
ST
6000
3.625
Ic Base Limited
STI24NM65N
STMicroelectronics
3260
4.65
ONSTAR ELECTRONICS CO., LIMITED