Part Number | STI23NM60ND |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 600V 19.5A I2PAK |
Series | FDmesh,II |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 19.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 70nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2050pF @ 50V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 150W (Tc) |
Rds On (Max) @ Id, Vgs | 180 mOhm @ 10A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAK |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
STI23NM60ND
STMicroel
7117
0.58
ATLANTIC TECHNOLOGY LIMITED
STI23NM60ND
STMICROELECT
2592
1.4375
CIS Ltd (CHECK IC SOLUTION LIMITED)
STI23NM60ND
ST/MICRON
5583
2.295
Hong Kong Capital Industrial Co.,Ltd
STI23NM60ND
ST
519
3.1525
ONSTAR ELECTRONICS CO., LIMITED
STI23NM60ND
STMicroelectronics
8311
4.01
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED