Part Number | STI21N65M5 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 650V 17A I2PAK |
Series | MDmesh,V |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 50nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1950pF @ 100V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 125W (Tc) |
Rds On (Max) @ Id, Vgs | 179 mOhm @ 8.5A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAK |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
STI21N65M5
STMicroel
350
1.29
Gallop Great Holdings (Hong Kong) Limited
STI21N65M5
STMICROELECT
20000
2.785
HK XINYI COMPONENTS ASIA CO., LIMITED
STI21N65M5
ST/MICRON
18000
4.28
ZS International Electronics Co., Limited
STI21N65M5
ST
312556
5.775
Cicotex Electronics (HK) Limited
STI21N65M5
STMicroelectronics
21646
7.27
N&S Electronic Co., Limited