Part Number | STI20N65M5 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 650V 18A I2PAK |
Series | MDmesh,V |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1434pF @ 100V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 130W (Tc) |
Rds On (Max) @ Id, Vgs | 190 mOhm @ 9A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAK |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
STI20N65M5
STMicroel
1978
0.34
HK HEQING ELECTRONICS LIMITED
STI20N65M5
STMICROELECT
100000
1.495
VBsemi Electronics Co., Limited
STI20N65M5
ST/MICRON
8000
2.65
AMAX ELECTRONIC TECHNOLOGY PTE.LTD.
STI20N65M5
ST
20000
3.805
HK XINYI COMPONENTS ASIA CO., LIMITED
STI20N65M5
STMicroelectronics
1000
4.96
E-Core Electronics Co.