Part Number | STI19NM65N |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 650V 15.5A I2PAK |
Series | MDmesh,II |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 15.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 55nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1900pF @ 50V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 150W (Tc) |
Rds On (Max) @ Id, Vgs | 270 mOhm @ 7.75A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAK |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
STI19NM65N
STMicroel
8137
0.03
MY Group (Asia) Limited
STI19NM65N
STMICROELECT
8507
1.265
ONSTAR ELECTRONICS CO., LIMITED
STI19NM65N
ST/MICRON
523
2.5
E-Core Electronics Co.
STI19NM65N
ST
7346
3.735
Cicotex Electronics (HK) Limited
STI19NM65N
STMicroelectronics
2993
4.97
ONSTAR ELECTRONICS CO., LIMITED