Part Number | STM STI18NM60N |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 600V 13A I2PAK |
Series | MDmesh,II |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1000pF @ 50V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 110W (Tc) |
Rds On (Max) @ Id, Vgs | 285 mOhm @ 6.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAK |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
STI18NM60N
STMicroel
29
0.59
Gallop Great Holdings (Hong Kong) Limited
STI18NM60N
STMICROELECT
100000
0.9575
VBsemi Electronics Co., Limited
STM STI18NM60N
ST/MICRON
99999
1.325
Rui Xin Da Electronic Hong Kong Co., Limited
STI18NM60N
ST
21029
1.6925
N&S Electronic Co., Limited
STI18NM60N**
STMicroelectronics
49800
2.06
N&S Electronic Co., Limited