Part Number | STI14NM65N |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 650V 12A I2PAK |
Series | MDmesh,II |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 45nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1300pF @ 50V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 125W (Tc) |
Rds On (Max) @ Id, Vgs | 380 mOhm @ 6A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAK |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
STI14NM65N
STMicroel
150
1.79
Gallop Great Holdings (Hong Kong) Limited
STI14NM65N
STMICROELECT
30000
2.9275
QUARKTWIN TECHNOLOGY LIMITED
STI14NM65N
ST/MICRON
9000
4.065
HK ZEKENG TRADING LIMITED
STI14NM65N
ST
11020
5.2025
CIS Ltd (CHECK IC SOLUTION LIMITED)
STI14NM65N
STMicroelectronics
7100
6.34
ATLANTIC TECHNOLOGY LIMITED