Part Number | STH80N10F7-2 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 100V 80A H2PAK-2 |
Series | DeepGATE, STripFET,VII |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 45nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3100pF @ 50V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 110W (Tc) |
Rds On (Max) @ Id, Vgs | 9.5 mOhm @ 40A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | H²ÂPAK |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab) Variant |
Image |
STH80N10F7-2
STMicroel
23700
0.06
HK HEQING ELECTRONICS LIMITED
STH80N10F7-2
STMICROELECT
15000
1.1625
Avail Electronics Co.,Ltd
STH80N10F7-2
ST/MICRON
20000
2.265
HK XINYI COMPONENTS ASIA CO., LIMITED
STH80N10F7-2
ST
8076
3.3675
Gallop Great Holdings (Hong Kong) Limited
STH80N10F72
STMicroelectronics
10000
4.47
Antony Electronic Ltd.