Part Number | STH185N10F3-6 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 100V 180A H2PAK-6 |
Series | Automotive, AEC-Q101, STripFET,F3 |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 114.6nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 6665pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 315W (Tc) |
Rds On (Max) @ Id, Vgs | 4.5 mOhm @ 60A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | H2PAK-6 |
Package / Case | TO-263-7, D²ÂPak (6 Leads + Tab) |
Image |
STH185N10F3-6
STMicroel
26000
0.82
CIS Ltd (CHECK IC SOLUTION LIMITED)
STH185N10F3-6
STMICROELECT
5000
1.9775
NEW IDEAS INDUSTRIAL CO., LIMITED
STH185N10F3-6
ST/MICRON
5710
3.135
ONSTAR ELECTRONICS CO., LIMITED
STH185N10F3-6
ST
30000
4.2925
Global Chip Components Limited
STH185N10F3-6
STMicroelectronics
20000
5.45
HK XINYI COMPONENTS ASIA CO., LIMITED