Part Number | STH180N10F3-2 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 100V 120A H2PAK |
Series | STripFET,III |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 114.6nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 6665pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 315W (Tc) |
Rds On (Max) @ Id, Vgs | 4.5 mOhm @ 60A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | H²ÂPAK |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab) Variant |
Image |
STH180N10F3-2
STMicroel
2000
1.29
HK HEQING ELECTRONICS LIMITED
STH180N10F3-2
STMICROELECT
19
1.6975
Gallop Great Holdings (Hong Kong) Limited
STH1 80N10F3-2
ST/MICRON
100000
2.105
VBsemi Electronics Co., Limited
STH180N10F3-2
ST
2000
2.5125
Corechips Co., Limited
STH1 80N10F3-2
STMicroelectronics
21060
2.92
N&S Electronic Co., Limited