Part Number | STGYA120M65DF2 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - IGBTs - Single |
Brand | STMicroelectronics |
Description | TRENCH GATE FIELD-STOP IGBT, M S |
Series | * |
Packaging | Tube |
IGBT Type | NPT, Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max) | 650V |
Current - Collector (Ic) (Max) | 160A |
Current - Collector Pulsed (Icm) | 360A |
Vce(on) (Max) @ Vge, Ic | 1.95V @ 15V, 120A |
Power - Max | 625W |
Switching Energy | 1.8mJ (on), 4.41mJ (off) |
Input Type | Standard |
Gate Charge | 420nC |
Td (on/off) @ 25°C | 66ns/185ns |
Test Condition | 400V, 120A, 4.7 Ohm, 15V |
Reverse Recovery Time (trr) | 202ns |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 Exposed Pad |
Supplier Device Package | MAX247 |
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