Part Number | STGWA80H65DFB |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - IGBTs - Single |
Brand | STMicroelectronics |
Description | IGBT BIPO 650V 80A TO247-3 |
Series | - |
Packaging | Tube |
IGBT Type | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max) | 650V |
Current - Collector (Ic) (Max) | 120A |
Current - Collector Pulsed (Icm) | 240A |
Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 80A |
Power - Max | 469W |
Switching Energy | 2.1mJ (on), 1.5mJ (off) |
Input Type | Standard |
Gate Charge | 414nC |
Td (on/off) @ 25°C | 84ns/280ns |
Test Condition | 400V, 80A, 10 Ohm, 15V |
Reverse Recovery Time (trr) | 85ns |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Supplier Device Package | TO-247 Long Leads |
Image |
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