Part Number | STGW80H65DFB-4 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - IGBTs - Single |
Brand | STMicroelectronics |
Description | IGBT BIPO 650V 80A TO247 |
Series | - |
Packaging | Tube |
IGBT Type | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max) | 650V |
Current - Collector (Ic) (Max) | 120A |
Current - Collector Pulsed (Icm) | 240A |
Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 80A |
Power - Max | 469W |
Switching Energy | 2.1mJ (on), 1.5mJ (off) |
Input Type | Standard |
Gate Charge | 414nC |
Td (on/off) @ 25°C | 84ns/280ns |
Test Condition | 400V, 80A, 10 Ohm, 15V |
Reverse Recovery Time (trr) | 85ns |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-4 |
Supplier Device Package | TO-247-4L |
Image |
STGW80H65DFB-4
STMicroel
8765
1.55
ONSTAR ELECTRONICS CO., LIMITED
STGW80H65DFB-4
STMICROELECT
8000
2.3
MY Group (Asia) Limited
STGW80H65DFB-4
ST/MICRON
11500
3.05
CIS Ltd (CHECK IC SOLUTION LIMITED)
STGW80H65DFB-4
ST
89
3.8
Shenzhen Renwei Trading Co.,Ltd
STGW80H65DFB-4
STMicroelectronics
10
4.55
Rainstar Components USA Incorporated Limited