Part Number | STGW30M65DF2 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - IGBTs - Single |
Brand | STMicroelectronics |
Description | TRENCH GATE FIELD-STOP IGBT M SE |
Series | - |
Packaging | Tube |
IGBT Type | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max) | 650V |
Current - Collector (Ic) (Max) | 60A |
Current - Collector Pulsed (Icm) | 120A |
Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 30A |
Power - Max | 258W |
Switching Energy | 300µJ (on), 960µJ (off) |
Input Type | Standard |
Gate Charge | 80nC |
Td (on/off) @ 25°C | 31.6ns/115ns |
Test Condition | 400V, 30A, 10 Ohm, 15V |
Reverse Recovery Time (trr) | 140ns |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Supplier Device Package | TO-247 |
Image |
STGW30M65DF2
STMicroel
20000
0.52
HK XINYI COMPONENTS ASIA CO., LIMITED
STGW30M65DF2
STMICROELECT
220360
1.46
Cinty Int'l (HK) Industry Co., Limited
STGW30M65DF2
ST/MICRON
1000
2.4
STH Electronics Co.,Ltd
STGW30M65DF2
ST
1200
3.34
RX ELECTRONICS LIMITED
STGW30M65DF2
STMicroelectronics
24934
4.28
NEW IDEAS INDUSTRIAL CO., LIMITED