Part Number | STGW10M65DF2 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - IGBTs - Single |
Brand | STMicroelectronics |
Description | TRENCH GATE FIELD-STOP IGBT M SE |
Series | M |
Packaging | Tube |
IGBT Type | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max) | 650V |
Current - Collector (Ic) (Max) | 20A |
Current - Collector Pulsed (Icm) | 40A |
Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 10A |
Power - Max | 115W |
Switching Energy | 120µJ (on), 270µJ (off) |
Input Type | Standard |
Gate Charge | 28nC |
Td (on/off) @ 25°C | 19ns/91ns |
Test Condition | 400V, 10A, 22 Ohm, 15V |
Reverse Recovery Time (trr) | 96ns |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Supplier Device Package | TO-247 |
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STGW10M65DF2
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6618
0.12
KYO Inc.
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3160
1.2375
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ST/MICRON
6663
2.355
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8728
3.4725
N&S Electronic Co., Limited
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8746
4.59
N&S Electronic Co., Limited