Description
Mar 20, 2013 STGP30H60DF , STGW30H60DF. 600 V, 30 A high speed trench gate field-stop IGBT. Datasheet - production data. Figure 1. Internal schematic Page 1. Thermal System Modeling. - 1 -. Thermal Modeling of. Power-electronic Systems. Dr. Martin M rz, Paul Nance. Infineon Technologies AG, Munich. Dec 16, 2013 mJ. 1. Energy losses include reverse recovery of the external diode. The diode is the same of the co-packed STGP30H60DF . 2. Turn-off losses
Part Number | STGP30H60DF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - IGBTs - Single |
Brand | STMicroelectronics |
Description | IGBT 600V 60A 260W TO220 |
Series | - |
Packaging | Tube |
IGBT Type | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 60A |
Current - Collector Pulsed (Icm) | 120A |
Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 30A |
Power - Max | 260W |
Switching Energy | 350µJ (on), 400µJ (off) |
Input Type | Standard |
Gate Charge | 105nC |
Td (on/off) @ 25°C | 50ns/160ns |
Test Condition | 400V, 30A, 10 Ohm, 15V |
Reverse Recovery Time (trr) | 110ns |
Operating Temperature | -40°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Supplier Device Package | TO-220 |
Image |
STGP30H60DF
STMicroel
12800
0.52
Sunton Electronics Co., Limited
STGP30H60DF
STMICROELECT
9120
1.7175
ONSTAR ELECTRONICS CO., LIMITED
STGP30H60DF
ST/MICRON
25000
2.915
N&S Electronic Co., Limited
STGP30H60DF
ST
2560
4.1125
CIS Ltd (CHECK IC SOLUTION LIMITED)
STGP30H60DF
STMicroelectronics
30000
5.31
Nosin (HK) Electronics Co.