Part Number | STGB4M65DF2 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - IGBTs - Single |
Brand | STMicroelectronics |
Description | TRENCH GATE FIELD-STOP IGBT, M S |
Series | M |
Packaging | |
IGBT Type | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max) | 650V |
Current - Collector (Ic) (Max) | 8A |
Current - Collector Pulsed (Icm) | 16A |
Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 4A |
Power - Max | 68W |
Switching Energy | 40µJ (on), 136µJ (off) |
Input Type | Standard |
Gate Charge | 15.2nC |
Td (on/off) @ 25°C | 12ns/86ns |
Test Condition | 400V, 4A, 47 Ohm, 15V |
Reverse Recovery Time (trr) | 133ns |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Supplier Device Package | D2PAK |
Image |
STGB4M65DF2
STMicroel
8000
0.59
MY Group (Asia) Limited
STGB4M65DF2
STMICROELECT
9147
1.745
Viassion Technology Co., Limited
STGB4M65DF2
ST/MICRON
10000
2.9
ShenZhen Boguang Electronics Co., Ltd.
STGB4M65DF2
ST
20000
4.055
Ande Electronics Co., Limited
STGB4M65DF2
STMicroelectronics
60000
5.21
Shenzhen Pohonda Electronics Co.,Ltd.