Part Number | STFW3N170 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 1700V 2.6A |
Series | PowerMESH |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 1700V (1.7kV) |
Current - Continuous Drain (Id) @ 25°C | 2.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 44nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 100V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 63W (Tc) |
Rds On (Max) @ Id, Vgs | 13 Ohm @ 1.3A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-3PF |
Package / Case | TO-3P-3 Full Pack |
Image |
STFW3N170
STMicroel
2400
0.73
HK HEQING ELECTRONICS LIMITED
STFW3N170
STMICROELECT
4800
1.89
SEMICON INTERNATIONAL (HONG KONG) CO., LIMITED
STFW3N170
ST/MICRON
6000
3.05
Riking Technology (HK) Co., Limited
STFW3N170
ST
2722
4.21
NEW IDEAS INDUSTRIAL CO., LIMITED
STFW3N170
STMicroelectronics
10400
5.37
CIS Ltd (CHECK IC SOLUTION LIMITED)