Part Number | STFI13N65M2 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 650V 10A I2PAKFP |
Series | MDmesh,M2 |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 590pF @ 100V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 25W (Tc) |
Rds On (Max) @ Id, Vgs | 430 mOhm @ 5A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAKFP (TO-281) |
Package / Case | TO-262-3 Full Pack, I²ÂPak |
Image |
STFI13N65M2
STMicroel
10000
0.03
Bomkey (HK) Electronic Co., Limited
STFI13N65M2
STMICROELECT
9120
0.8225
ONSTAR ELECTRONICS CO., LIMITED
STFI13N65M2
ST/MICRON
9880
1.615
MAIXIN SEMICONDUCTOR (HONGKONG) CO., LIMITED
STFI13N65M2
ST
15000
2.4075
Junzhan Electronic (HK) Limited
STFI13N65M2
STMicroelectronics
14000
3.2
MY Group (Asia) Limited