Part Number | STFI10N65K3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 650V 10A I2PAKFP |
Series | SuperMESH3 |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 42nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1180pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 35W (Tc) |
Rds On (Max) @ Id, Vgs | 1 Ohm @ 3.6A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAKFP (TO-281) |
Package / Case | TO-262-3 Full Pack, I²ÂPak |
Image |
STFI10N65K3
STMicroel
6016
0.25
Dedicate Electronics (HK) Limited
STFI10N65K3
STMICROELECT
1046
0.845
CIS Ltd (CHECK IC SOLUTION LIMITED)
STFI10N65K3
ST/MICRON
3260
1.44
ONSTAR ELECTRONICS CO., LIMITED
STFI10N65K3
ST
14000
2.035
MY Group (Asia) Limited
STFI10N65K3
STMicroelectronics
50
2.63
Yingxinyuan INT'L (Group) Limited